Newest Trends of Next-Gen Semiconductor Packages, Materials, and Substrates

IoT, 5G, ADAS, and generative AI, and other technologies have led to an increase in information, which necessitates high-speed, high-capacity, and wide-bandwidth transmission in data centers and terminals. This requirement calls for the miniaturization, high integration, high density, and narrow pitch of chip connection parts, as well as the need for large-area coverage for 2.xD to 3D packages on the package substrate.

This technical document describes the roadmap and development status of 2.xD and 3D package materials, and discusses the challenges and trends of next-generation package materials.

Table of Contents

1. Introduction
2. Market and technology trends of semiconductor packages
3. Challenges and development trends of next-generation package materials
4. Technical Characteristics

Technical Characteristics

• Roadmap of 2.xD and 3D package materials
• Fine bump bonding technology
• Fine-pitch underfill material technology
• Fluxless bonding technology
• RDL interposer using a semi-additive method
• Chip bridge interposer
• Interposer / Substrate packaging